半导体材料的带隙及电子空穴迁移率
| Semiconductor | Bandgap | Electric Mobility(cm | Hole Mobility( |
|---|---|---|---|
| C | 5.47 | 800 | 1200 |
| Ge | 0.66 | 3900 | 1900 |
| a_SiC | 2.996 | 400 | 50 |
| Si | 1.12 | 1500 | 450 |
| GaSb | 0.72 | 5000 | 850 |
| GaAs | 1.42 | 8500 | 400 |
| GaP | 2.26 | 110 | 75 |
| InSb/tD> | 0.17 | 8000 | 1250 |
| InP | 1.35 | 4600 | 150 |
| CdTe | 1.56 | 1050 | 100 |
| PbTe | 0.31 | 6000 | 4000 |
Data at 300K